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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector DESCRIPTION BUW13W BUW13AW Fig.1 simplified outline (TO-247) and symbol Emitter Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER BUW13W Open emitter VCEO VEBO IC ICM IB IBM PT Tj Tstg HAN INC Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature SEM GE BUW13AW BUW13W BUW13AW Open base DUC ICON CONDITIONS VALUE 850 TOR 1000 400 450 9 15 30 6 9 UNIT V V V A A A A W ae ae Open collector TC=25ae 175 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX 0.7 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BUW13W VCEO(SUS) Collector-emitter sustaining voltage BUW13AW BUW13W VCEsat Collector-emitter saturation voltage BUW13AW BUW13W VBEsat Base-emitter saturation voltage BUW13AW ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 Tj=125ae VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V IC=8A; IB=1.6A IC=10A; IB=2A IC=10A; IB=2A IC=0.1A ; IB=0; L=25mH CONDITIONS BUW13W BUW13AW SYMBOL MIN 400 TYP. MAX UNIT V 450 1.5 V 1.6 V 1.0 4.0 10 10 mA mA DC current gain DC current gain Switching times resistive load ton ts tf Turn-on time Storage time Fall time HAN INC SEM GE OND IC 10 TOR UC 35 35 1.0 4.0 |I |I |I s s s For BUW13W IC=10A ;IB1=-IB2=-2A For BUW13AW IC=8A ;IB1=-IB2=-1.6A 0.8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13W BUW13AW SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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